ty semiconductor reliability handbook (?handling SSM6N44FE high speed switching applications analog switching applications ? compact package suitable for high-density mounting ? low on-resistance : r ds(on) = 4.0 ? (max) (@v gs = 4 v) : r ds(on) = 7.0 ? (max) (@v gs = 2.5 v) absolute maximum ratings (ta = 25c) (q1, q2 common) characteristics symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v dc i d 100 drain current pulse i dp 200 ma drain power dissipation (ta = 25c) p d (note 1) 150 mw channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the precautions?/?derating concept and met hods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.135 mm 2 6) marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mount ing on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm 0.20.05 6 1.20.05 1.60.05 1.00.05 1 2 0.50.5 3 1.60.05 5 4 0.120.05 0.550.05 weight: 3 mg (typ.) n t 6 5 4 1 2 3 q1 q2 6 5 4 1 2 3 1.source1 2.gate1 3.drain2 4.source2 5.gate2 6.drain1 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta = 25c) (q1, q2 common) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 14 v, v ds = 0 v ? ? 1 a drain-source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0 v 30 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 v ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.8 ? 1.5 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 10 ma 25 ? ? ms i d = 10 ma, v gs = 4 v ? 2.2 4.0 drain-source on resistance r ds (on) i d = 10 ma, v gs = 2.5 v ? 4.0 7.0 input capacitance c iss ? 8.5 ? reverse transfer capacitance c rss ? 5.3 ? output capacitance c oss v ds = 3 v, v gs = 0 v, f = 1 mhz ? 9.4 ? pf turn-on time t on ? 50 ? switching time turn-off time t off v dd = 5 v, i d = 10 ma, v gs = 0 to 5 v ? 200 ? ns switching time test circuit precaution let v th be the voltage applied between gate and sour ce that causes the drain current (i d ) to be low (0.1ma for the SSM6N44FE). then, for normal switching operation, v gs(on) must be higher than v th, and v gs(off) must be lower than v th. this relationship can be expressed as: v gs(off) < v th < v gs(on). take this into consideration when using the device (c) v out (b) v in t on 90% 10% 0 v 5 v 10% 90% t off t r t f v dd v ds ( on ) v dd = 5 v d.u. 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c v dd out in 5 v 0 10 s 50 r l (a) test circuit SSM6N44FE product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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